EAP - Proceedings of the Estonian Academy of Sciences

PUBLISHED
SINCE 1952

proceedings
of the estonian academy of sciences

ISSN 1736-7530 (Electronic)
ISSN 1736-6046 (Print)

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Polycrystalline CuIn₃Se₅ thin film photoabsorber deposited by the pulsed laser deposition technique; pp. 24–28

PDF | doi: 10.3176/proc.2009.1.04

Authors

Andrey Tverjanovich, Sergei Bereznev, Evgeny N. Borisov, Dongsoo Kim, Julia Kois, Kristjan Laes, Olga Volobujeva, Andres Öpik, Enn Mellikov, Yuri S. Tveryanovich

Abstract

Polycrystalline CuIn₃Se₅ photoabsorber thin films were deposited onto glass/ITO substrates by using the pulsed laser deposition (PLD) technique. Stoichiometric CuIn₃Se₅ samples for PLD targets were synthesized in evacuated quartz ampoules by the vacuum melting of pure elements. The synthesized samples and deposited films were tested by using XRD analysis. The conditions of the PLD process were developed for the preparation of polycrystalline CuIn₃Se₅ thin films of the same composition as a source target and with the thickness in the range 300–450 nm. The influence of thermal annealing on photovoltaic properties and morphology of as-deposited CuIn₃Se₅ layers was investigated.

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