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Estonian Journal of Engineering

2013 2012 2011 Vol. 17, Issue 4 Vol. 17, Issue 3 Vol. 17, Issue 2 Vol. 17, Issue 1 2010 2009 2008

Open Access Journal

Generalized analytical model for SiC polytypic heterojunctions; pp. 151–157

PDF | doi: 10.3176/eng.2011.2.05

Authors

Toomas Rang, Indrek Tabun, Galina Rang, Ants Koel

Abstract

A new generalized analytical model has been developed for analysing SiC polytypic heterojunctions. The forward and reverse biasing situations have been investigated and two novel results have been detected. First, the activation energy plays a major role in the determination of the place of the so-called knee point. The smaller the activation energy, the lower value has the knee point. Similar behaviour has been observed also by the increase of the temperature. Second, the density of traps and their temperature behaviour limits the current approximately at 350 °C, which means that the increase of the reverse current and therefore the reverse biasing is not in correlation anymore.

References

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