EAP - Proceedings of the Estonian Academy of Sciences. Physics. Mathematics Publications

Proceedings of the Estonian Academy of Sciences. Physics. Mathematics

2007 2006 2005 2004 2003 Vol. 52, Issue 4 Vol. 52, Issue 3 Vol. 52, Issue 2 Vol. 52, Issue 1 2002 2001 2000 1999 1998 1997 1996 1995 1994 1993 1992 1991 1990

Open Access Journal

Vol 52, Issue 3, 2003

Special issue on atomic layer deposition

Preface; pp. 243–244

Arnold Rosental

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Precursor design of vapour deposited cubic boron nitride versus diamond; pp. 245–256

Karin Larsson

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High-temperature atomic layer epitaxy of TiO₂ from TiCl₄ and H₂O₂–H₂O; pp. 257–265

Ahti Niilisk, Arnold Rosental, Aivar Tarre, Teet Uustare

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Atomic layer deposition: a key technology for the controlled growth of oxide thin films for advanced applications; pp. 266–276

Lauri Niinistö

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Atomic layer deposition of ZnO thin films and dot structures; pp. 277–288

Marek Godlewski, Krzysztof Kopalko, Andrzej Szczerbakow, Elżbieta Łusakowska, Michał M. Godlewski, Ewa M. Goldys, Kenneth Scott A. Butcher, Matthew R. Phillips

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Spectroscopic characterization of ZrO₂ thin films grown by atomic layer deposition; pp. 289–298

Jaan Aarik, Hugo Mändar, Marco Kirm

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Analysis of Zn(O,S) films for Cu(In,Ga)Se₂ solar cells; pp. 299–307

Charlotte Platzer-Björkman, John Kessler, Lars Stolt

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Effects of growth temperature on the properties of HfO₂ films grown by atomic layer deposition; pp. 308–320

Giovanna Scarel, Claudia Wiemer, Sandro Ferrari, Grazia Tallarida, Marco Fanciulli

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Optical coatings grown by atomic layer deposition for high-power laser applications; pp. 321–329

Shin-ichi Zaitsu, Shinji Motokoshi, Takahisa Jitsuno, Masahiro Nakatsuka, Tatsuhiko Yamanaka

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