ESTONIAN ACADEMY
PUBLISHERS
eesti teaduste
akadeemia kirjastus
cover
Proceedings of the Estonian Academy of Sciences. Physics. Mathematics

Vol 52, Issue 3, 2003
Special issue on atomic layer deposition

Preface; pp. 243–244
Arnold Rosental
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Precursor design of vapour deposited cubic boron nitride versus diamond; pp. 245–256
Karin Larsson
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High-temperature atomic layer epitaxy of TiO2 from TiCl4 and H2O2–H2O; pp. 257–265
Ahti Niilisk, Arnold Rosental, Aivar Tarre, Teet Uustare
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Atomic layer deposition: a key technology for the controlled growth of oxide thin films for advanced applications; pp. 266–276
Lauri Niinistö
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Atomic layer deposition of ZnO thin films and dot structures; pp. 277–288
Marek Godlewski, Krzysztof Kopalko, Andrzej Szczerbakow, Elżbieta Łusakowska, Michał M. Godlewski, Ewa M. Goldys, Kenneth Scott A. Butcher, Matthew R. Phillips
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Spectroscopic characterization of ZrO2 thin films grown by atomic layer deposition; pp. 289–298
Jaan Aarik, Hugo Mändar, Marco Kirm
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Analysis of Zn(O,S) films for Cu(In,Ga)Se2 solar cells; pp. 299–307
Charlotte Platzer-Björkman, John Kessler, Lars Stolt
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Effects of growth temperature on the properties of HfO2 films grown by atomic layer deposition; pp. 308–320
Giovanna Scarel, Claudia Wiemer, Sandro Ferrari, Grazia Tallarida, Marco Fanciulli
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Optical coatings grown by atomic layer deposition for high-power laser applications; pp. 321–329
Shin-ichi Zaitsu, Shinji Motokoshi, Takahisa Jitsuno, Masahiro Nakatsuka, Tatsuhiko Yamanaka
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