Applying a varied current excitation to p-n junctions, calibration-free temperature measurement can be performed with improved accuracy, independent from manufacturing variance. For the realization of this method, an adequate modelling of the p-n junction I-U characteristic, taking into account semiconductor secondary effects and parameter extraction procedures, is needed. A behavioural model of this procedure is proposed. Experimental results show an improvement of accuracy relative to previous calibration-free methods. The temperature calculation procedure, which in this case is carried out within a parameter extraction procedure, converges very fast.
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