The aim of this paper is to investigate the behaviour of the break-over voltages of thyristor structures, based on wide bandgap materials, under different conditions. Influence of the narrow and wide base width, electron/hole lifetime, shunt and collector resistance, donor/acceptor concentration, temperature, and charge carrier recombination time on the break-over voltage has been investigated and analysed. On the basis of this information it is possible to make suggestions to the designers of the device to avoid expensive practical experiments.
1. Sze, S. M. Semiconductor Devices, Physics and Technology, 2nd ed. J. Wiley, New York, 2002.
doi:10.1007/0-306-47622-3_10
3. Harris, G. L. (ed.). Properties of Silicon Carbide. IEE Inspec Publication, 1995.
4. Properties of Gallium Arsenide, 2nd ed. IEE Inspec Publication, 1998.
5. Kirschman, R. (ed.). High Temperature Electronics. IEEE Press, 1998.
6. Boer, K. W. Survey of Semiconductor Physics, 2nd ed. J. Wiley, New York, 2002.
7. Dorf, R. C. The Electrical Engineering Handbook, 2nd ed. CRC Press/IEEE Press, New York, 1997.
