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Estonian Journal of Engineering
Generalized analytical model for SiC polytypic heterojunctions; pp. 151–157
PDF | doi: 10.3176/eng.2011.2.05

Toomas Rang, Indrek Tabun, Galina Rang, Ants Koel
A new generalized analytical model has been developed for analysing SiC polytypic heterojunctions. The forward and reverse biasing situations have been investigated and two novel results have been detected. First, the activation energy plays a major role in the determination of the place of the so-called knee point. The smaller the activation energy, the lower value has the knee point. Similar behaviour has been observed also by the increase of the temperature. Second, the density of traps and their temperature behaviour limits the current approximately at 350 °C, which means that the increase of the reverse current and therefore the reverse biasing is not in correlation anymore.

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